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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION *High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) *Complement to Type 2SA1358 APPLICATIONS *Designed for audio frequency power amplifier applications. *Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC IB B Collector Current-Continuous w w scs .i w 120 V 120 V 5 V 1 A 0.1 A 10 W 1.5 .cn mi e Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3421 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.0 V VBE(on) ICBO Base-Emitter On Voltage IC= 500mA ; VCE= 5V VCB= 120V; IE= 0 1.0 V A A Collector Cutoff Current 0.1 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE Classifications O 80-160 Y w ww scs .i IC= 0.1A ; VCE= 5V IC= 0.1A ; VCE= 5V IE= 0; VCB= 10V, ftest= 1MHz .cn mi e 80 0.1 240 120 MHz 15 pF 120-240 isc Websitewww.iscsemi.cn 2 |
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